VBsemi Elec-Single FETs, MOSFETs-FDC6312P-VB

Description

Drain to Source Voltage;20V/Gate Charge(Qg);2.7nC@4.5V/Number;2 P-Channel/Pd - Power Dissipation;1.14W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);33pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input Capacitance;210pF


P-Channel 20V 4A 1.14W Surface Mount TSOP-6

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);2.7nC@4.5V/Number;2 P-Channel/Pd - Power Dissipation;1.14W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);33pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input... Read more

$3.27 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);2.7nC@4.5V/Number;2 P-Channel/Pd - Power Dissipation;1.14W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);33pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input Capacitance;210pF


    P-Channel 20V 4A 1.14W Surface Mount TSOP-6

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