VBsemi Elec-Single FETs, MOSFETs-FDC6318P-VB

Description

Drain to Source Voltage;20V/Gate Charge(Qg);2.7nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.14W/Reverse Transfer Capacitance (Crss@Vds);33pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input Capacitance;210pF


20V 1 P-Channel 1.14W SOT23-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);2.7nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.14W/Reverse Transfer Capacitance (Crss@Vds);33pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input Capacitance;210pF20V 1... Read more

$1.71 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);2.7nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.14W/Reverse Transfer Capacitance (Crss@Vds);33pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input Capacitance;210pF


    20V 1 P-Channel 1.14W SOT23-6 Single FETs, MOSFETs RoHS

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