VBsemi Elec-Single FETs, MOSFETs-FDC855N-VB
- VBsemi Elec
Drain to Source Voltage;30V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.3W/RDS(on);27mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);42pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more
$2.82 Excl. VAT
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