VBsemi Elec-Single FETs, MOSFETs-FDD8880-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);31nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.75W/RDS(on);5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);270pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.201nF/Output Capacitance(Coss);525pF


30V 5mΩ@10V 1 N-channel 3.75W TO-252-2 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);31nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.75W/RDS(on);5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);270pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);31nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.75W/RDS(on);5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);270pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.201nF/Output Capacitance(Coss);525pF


    30V 5mΩ@10V 1 N-channel 3.75W TO-252-2 Single FETs, MOSFETs RoHS

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