VBsemi Elec-Single FETs, MOSFETs-FDMC3612-VB

Description

Drain to Source Voltage;100V/Gate Charge(Qg);90nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;60W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.2nF/Output Capacitance(Coss);410pF


N-Channel 100V 50A 60W Surface Mount DFN3x3-8

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);90nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;60W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);90nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;60W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.2nF/Output Capacitance(Coss);410pF


    N-Channel 100V 50A 60W Surface Mount DFN3x3-8

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