VBsemi Elec-Single FETs, MOSFETs-FDMS7682-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);71nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;35W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);970pF/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.2nF/Output Capacitance(Coss);1.025nF


N-Channel 30V 21A 35W Surface Mount DFN5x6-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);71nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;35W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);970pF/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);71nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;35W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);970pF/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.2nF/Output Capacitance(Coss);1.025nF


    N-Channel 30V 21A 35W Surface Mount DFN5x6-8

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