VBsemi Elec-Single FETs, MOSFETs-FDP3632-VB

Description

Drain to Source Voltage;100V/Gate Charge(Qg);160nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;250W/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);265pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.7nF/Output Capacitance(Coss);665pF


N-Channel 100V 100A 250W Through Hole TO-220AB

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);160nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;250W/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);265pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);160nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;250W/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);265pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.7nF/Output Capacitance(Coss);665pF


    N-Channel 100V 100A 250W Through Hole TO-220AB

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