VBsemi Elec-Single FETs, MOSFETs-FDT86256-VB

Description

Drain to Source Voltage;150V/Gate Charge(Qg);51nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3W/RDS(on);283mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.8nF/Output Capacitance(Coss);180pF


N-Channel 150V 5A 3W Surface Mount SOT-223

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);51nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3W/RDS(on);283mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);51nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3W/RDS(on);283mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.8nF/Output Capacitance(Coss);180pF


    N-Channel 150V 5A 3W Surface Mount SOT-223

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