VBsemi Elec-Single FETs, MOSFETs-FQP10N60C-VB

Description

Drain to Source Voltage;650V/Gate Charge(Qg);43nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;106W/RDS(on);580mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.2nF/Output Capacitance(Coss);420pF


N-Channel 650V 12A 106W Through Hole TO-220AB

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);43nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;106W/RDS(on);580mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);43nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;106W/RDS(on);580mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.2nF/Output Capacitance(Coss);420pF


    N-Channel 650V 12A 106W Through Hole TO-220AB

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