VBsemi Elec-Single FETs, MOSFETs-FQU13N10-VB

Description

Drain to Source Voltage;100V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;61W/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;892pF


100V 1 N-channel 61W TO-251 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;61W/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

$1.35 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;61W/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;892pF


    100V 1 N-channel 61W TO-251 Single FETs, MOSFETs RoHS

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