VBsemi Elec-Single FETs, MOSFETs-FTA10N60C-VB

Description

Drain to Source Voltage;650V/Gate Charge(Qg);4nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;178W/RDS(on);820mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);240pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.9nF/Output Capacitance(Coss);400pF


N-Channel 650V 10A 178W Through Hole TO-220F

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);4nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;178W/RDS(on);820mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);240pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);4nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;178W/RDS(on);820mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);240pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.9nF/Output Capacitance(Coss);400pF


    N-Channel 650V 10A 178W Through Hole TO-220F

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