VBsemi Elec-Single FETs, MOSFETs-FTP18N20C-VB

Description

Drain to Source Voltage;200V/Gate Charge(Qg);34nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);110mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.8nF/Output Capacitance(Coss);180pF


N-Channel 200V 30A 125W Through Hole TO-220AB

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);34nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);110mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);34nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);110mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.8nF/Output Capacitance(Coss);180pF


    N-Channel 200V 30A 125W Through Hole TO-220AB

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