VBsemi Elec-Single FETs, MOSFETs-FU9024-VB

Description

Drain to Source Voltage;60V/Gate Charge(Qg);40nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;20W/RDS(on);80mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.2nF/Output Capacitance(Coss);200pF


P-Channel 60V 20A 20W Through Hole TO-251

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);40nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;20W/RDS(on);80mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);40nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;20W/RDS(on);80mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.2nF/Output Capacitance(Coss);200pF


    P-Channel 60V 20A 20W Through Hole TO-251

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