VBsemi Elec-Single FETs, MOSFETs-FW356-TL-E-VB

Description

Drain to Source Voltage;60V/Gate Charge(Qg);6nC@10V;8nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;3.1W;3.4W/RDS(on);26mΩ@10V;55mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF;60pF/Current - Continuous Drain(Id);5.3A;4.9A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;665pF;650pF/Output Capacitance(Coss);75pF;95pF


N-Channel+P-Channel 60V 5.3A 3.4W Surface Mount SO-8

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);6nC@10V;8nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;3.1W;3.4W/RDS(on);26mΩ@10V;55mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF;60pF/Current -... Read more

$1.86 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);6nC@10V;8nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;3.1W;3.4W/RDS(on);26mΩ@10V;55mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF;60pF/Current - Continuous Drain(Id);5.3A;4.9A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;665pF;650pF/Output Capacitance(Coss);75pF;95pF


    N-Channel+P-Channel 60V 5.3A 3.4W Surface Mount SO-8

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