VBsemi Elec-Single FETs, MOSFETs-HAF1004S-VB

Description

Drain to Source Voltage;60V/Gate Charge(Qg);10nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;34W/RDS(on);61mΩ@10V;72mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);100pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1nF


P-Channel 60V 30A 34W Surface Mount TO-252

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);10nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;34W/RDS(on);61mΩ@10V;72mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);100pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);10nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;34W/RDS(on);61mΩ@10V;72mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);100pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1nF


    P-Channel 60V 30A 34W Surface Mount TO-252

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