VBsemi Elec-Single FETs, MOSFETs-HAT2092RJ-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);5.9nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;4.1W/RDS(on);12mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13.5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;641pF/Output Capacitance(Coss);175pF


N-Channel Array 30V 13.5A 4.1W Surface Mount SO-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);5.9nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;4.1W/RDS(on);12mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13.5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;641pF/Output Capacitance(Coss);175pFN-Channel Array... Read more

$1.71 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);5.9nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;4.1W/RDS(on);12mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13.5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;641pF/Output Capacitance(Coss);175pF


    N-Channel Array 30V 13.5A 4.1W Surface Mount SO-8

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