VBsemi Elec-Single FETs, MOSFETs-HM4622-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);18.5nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;3.1W/RDS(on);50mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);57pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;620pF/Output Capacitance(Coss);115pF


N-Channel+P-Channel Array 30V 8A 3.1W Surface Mount SO-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);18.5nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;3.1W/RDS(on);50mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);57pF/Current -... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);18.5nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;3.1W/RDS(on);50mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);57pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;620pF/Output Capacitance(Coss);115pF


    N-Channel+P-Channel Array 30V 8A 3.1W Surface Mount SO-8

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