VBsemi Elec-Single FETs, MOSFETs-IPP076N15N5-VB

Description

Drain to Source Voltage;150V/Gate Charge(Qg);96nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);21pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;4nF/Output Capacitance(Coss);246pF


N-Channel 150V 140A Through Hole TO-220AB

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);96nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);21pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);96nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);21pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;4nF/Output Capacitance(Coss);246pF


    N-Channel 150V 140A Through Hole TO-220AB

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