VBsemi Elec-Single FETs, MOSFETs-IPP80CN10NG-VB

Description

Drain to Source Voltage;100V/Type;N-Channel/Pd - Power Dissipation;3.75W/RDS(on);36mΩ@10V/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));3V


N-Channel 100V 55A 3.75W Through Hole TO-220AB

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Drain to Source Voltage;100V/Type;N-Channel/Pd - Power Dissipation;3.75W/RDS(on);36mΩ@10V/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));3VN-Channel 100V 55A 3.75W Through Hole TO-220AB Read more

$2.28 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Type;N-Channel/Pd - Power Dissipation;3.75W/RDS(on);36mΩ@10V/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));3V


    N-Channel 100V 55A 3.75W Through Hole TO-220AB

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