VBsemi Elec-Single FETs, MOSFETs-IPP90N06S4L-04-VB

Description

Drain to Source Voltage;60V/Gate Charge(Qg);180nC@10V/Type;N-Channel/Pd - Power Dissipation;375W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);750pF/Current - Continuous Drain(Id);210A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;9.3nF/Output Capacitance(Coss);1nF


N-Channel 60V 210A 375W Through Hole TO-220AB

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);180nC@10V/Type;N-Channel/Pd - Power Dissipation;375W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);750pF/Current - Continuous Drain(Id);210A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;9.3nF/Output... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);180nC@10V/Type;N-Channel/Pd - Power Dissipation;375W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);750pF/Current - Continuous Drain(Id);210A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;9.3nF/Output Capacitance(Coss);1nF


    N-Channel 60V 210A 375W Through Hole TO-220AB

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