VBsemi Elec-Single FETs, MOSFETs-IRF5801TRPBF-VB

Description

Drain to Source Voltage;200V/Gate Charge(Qg);6.2nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;5W/RDS(on);160mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);82pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;650pF/Output Capacitance(Coss);200pF


N-Channel 200V 4A 5W Surface Mount TSOP-6

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);6.2nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;5W/RDS(on);160mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);82pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;650pF/Output Capacitance(Coss);200pFN-Channel... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);6.2nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;5W/RDS(on);160mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);82pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;650pF/Output Capacitance(Coss);200pF


    N-Channel 200V 4A 5W Surface Mount TSOP-6

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