VBsemi Elec-Single FETs, MOSFETs-IRF720PBF-VB

Description

Drain to Source Voltage;650V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;60W/RDS(on);1.7Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.017nF/Output Capacitance(Coss);170pF


N-Channel 650V 4.5A 60W Through Hole TO-220AB

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;60W/RDS(on);1.7Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;60W/RDS(on);1.7Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.017nF/Output Capacitance(Coss);170pF


    N-Channel 650V 4.5A 60W Through Hole TO-220AB

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