VBsemi Elec-Single FETs, MOSFETs-IRF9520S-VB

Description

Drain to Source Voltage;100V/Gate Charge(Qg);67nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;50.7W/RDS(on);220mΩ@10V;240mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.765nF/Output Capacitance(Coss);330pF


100V 1 P-Channel 50.7W TO-263 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);67nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;50.7W/RDS(on);220mΩ@10V;240mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);67nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;50.7W/RDS(on);220mΩ@10V;240mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.765nF/Output Capacitance(Coss);330pF


    100V 1 P-Channel 50.7W TO-263 Single FETs, MOSFETs RoHS

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