VBsemi Elec-Single FETs, MOSFETs-IRF9542-VB

Description

Drain to Source Voltage;100V/Gate Charge(Qg);100nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.1W/RDS(on);178mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.46nF/Output Capacitance(Coss);330pF


P-Channel 100V 18A 1.1W Through Hole TO-220AB

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);100nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.1W/RDS(on);178mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);100nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.1W/RDS(on);178mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.46nF/Output Capacitance(Coss);330pF


    P-Channel 100V 18A 1.1W Through Hole TO-220AB

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