VBsemi Elec-Single FETs, MOSFETs-IRF9640PBF-VB

Description

Drain to Source Voltage;200V/Gate Charge(Qg);44nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;125W/RDS(on);500mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);81pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.2nF/Output Capacitance(Coss);370pF


P-Channel 200V 11A 125W Through Hole TO-220AB

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);44nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;125W/RDS(on);500mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);81pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);44nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;125W/RDS(on);500mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);81pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.2nF/Output Capacitance(Coss);370pF


    P-Channel 200V 11A 125W Through Hole TO-220AB

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