VBsemi Elec-Single FETs, MOSFETs-IRFU13N20DPBF-VB

Description

Drain to Source Voltage;200V/Gate Charge(Qg);40nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.5W/RDS(on);70mΩ@6V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);180pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.4nF/Output Capacitance(Coss);280pF


N-Channel 200V 25A 3.5W Through Hole TO-251

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);40nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.5W/RDS(on);70mΩ@6V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);180pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$3.66 Excl. VAT

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);40nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.5W/RDS(on);70mΩ@6V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);180pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.4nF/Output Capacitance(Coss);280pF


    N-Channel 200V 25A 3.5W Through Hole TO-251

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