VBsemi Elec-Single FETs, MOSFETs-IXFH140N10P-VB

Description

Drain to Source Voltage;100V/Gate Charge(Qg);110nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;375W/RDS(on);6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;6.7nF/Output Capacitance(Coss);750pF


N-Channel 100V 150A 375W Through Hole TO-247

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);110nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;375W/RDS(on);6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);110nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;375W/RDS(on);6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;6.7nF/Output Capacitance(Coss);750pF


    N-Channel 100V 150A 375W Through Hole TO-247

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