VBsemi Elec-Single FETs, MOSFETs-IXFH44N50P-VB

Description

Drain to Source Voltage;500V/Gate Charge(Qg);350nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;530W/RDS(on);80mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);120pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));5V


N-Channel 500V 40A 530W Through Hole TO-247

Product form

Drain to Source Voltage;500V/Gate Charge(Qg);350nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;530W/RDS(on);80mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);120pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));5VN-Channel... Read more

$9.60 Excl. VAT

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    Description

    Drain to Source Voltage;500V/Gate Charge(Qg);350nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;530W/RDS(on);80mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);120pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));5V


    N-Channel 500V 40A 530W Through Hole TO-247

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