VBsemi Elec-Single FETs, MOSFETs-IXTH120N20X4-VB

Description

Drain to Source Voltage;200V/Gate Charge(Qg);96nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4.5V


N-Channel 200V 110A 110W Through Hole TO-247

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);96nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4.5VN-Channel 200V 110A 110W... Read more

$9.45 Excl. VAT

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);96nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4.5V


    N-Channel 200V 110A 110W Through Hole TO-247

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