VBsemi Elec-Single FETs, MOSFETs-IXTH30N60P-VB

Description

Drain to Source Voltage;650V/Gate Charge(Qg);106nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;208W/RDS(on);190mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4V


N-Channel 650V 20A 208W Through Hole TO-247AC

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);106nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;208W/RDS(on);190mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4VN-Channel 650V 20A 208W... Read more

$8.28 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);106nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;208W/RDS(on);190mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4V


    N-Channel 650V 20A 208W Through Hole TO-247AC

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