VBsemi Elec-Single FETs, MOSFETs-IXTH36N50P-VB

Description

Drain to Source Voltage;500V/Gate Charge(Qg);350nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;530W/RDS(on);80mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);120pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;8.31nF/Output Capacitance(Coss);10.17nF


N-Channel 500V 40A 530W Through Hole TO-247AC

Product form

Drain to Source Voltage;500V/Gate Charge(Qg);350nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;530W/RDS(on);80mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);120pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;500V/Gate Charge(Qg);350nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;530W/RDS(on);80mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);120pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;8.31nF/Output Capacitance(Coss);10.17nF


    N-Channel 500V 40A 530W Through Hole TO-247AC

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