VBsemi Elec-Single FETs, MOSFETs-MDS3652URH-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);13nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;4.2W/RDS(on);24mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);145pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.455nF/Output Capacitance(Coss);180pF


P-Channel 30V 9A 4.2W Surface Mount SO-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);13nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;4.2W/RDS(on);24mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);145pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.455nF/Output Capacitance(Coss);180pFP-Channel... Read more

$5.10 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);13nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;4.2W/RDS(on);24mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);145pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.455nF/Output Capacitance(Coss);180pF


    P-Channel 30V 9A 4.2W Surface Mount SO-8

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