VBsemi Elec-Single FETs, MOSFETs-ME4502-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);20nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;3W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);254pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;1.515nF/Output Capacitance(Coss);800pF


N-Channel+P-Channel Array 30V 11A 3W Surface Mount SO-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);20nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;3W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);254pF/Current -... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);20nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;3W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);254pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;1.515nF/Output Capacitance(Coss);800pF


    N-Channel+P-Channel Array 30V 11A 3W Surface Mount SO-8

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