VBsemi Elec-Single FETs, MOSFETs-MTB1D7N03E3-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);257nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;175W/RDS(on);2.8mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);970pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;8.4nF/Output Capacitance(Coss);1.725nF


N-Channel 30V 140A 175W Through Hole TO-220AB

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);257nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;175W/RDS(on);2.8mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);970pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);257nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;175W/RDS(on);2.8mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);970pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;8.4nF/Output Capacitance(Coss);1.725nF


    N-Channel 30V 140A 175W Through Hole TO-220AB

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