VBsemi Elec-Single FETs, MOSFETs-NDB6030PL-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);115nC@10V;56nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;250W/RDS(on);8mΩ@10V;11mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));2.5V


P-Channel 30V 75A 250W Surface Mount TO-263(D2PAK)

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);115nC@10V;56nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;250W/RDS(on);8mΩ@10V;11mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));2.5VP-Channel 30V 75A 250W... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);115nC@10V;56nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;250W/RDS(on);8mΩ@10V;11mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));2.5V


    P-Channel 30V 75A 250W Surface Mount TO-263(D2PAK)

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