VBsemi Elec-Single FETs, MOSFETs-NDP508A-VB

Description

Drain to Source Voltage;100V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.75W/RDS(on);36mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);90pF/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;4.5nF/Output Capacitance(Coss);270pF


N-Channel 100V 55A 3.75W Through Hole TO-220AB

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.75W/RDS(on);36mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);90pF/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

$2.28 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.75W/RDS(on);36mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);90pF/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;4.5nF/Output Capacitance(Coss);270pF


    N-Channel 100V 55A 3.75W Through Hole TO-220AB

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