VBsemi Elec-Single FETs, MOSFETs-NTE4151PT1G-VB

Description

Drain to Source Voltage;20V/Gate Charge(Qg);1.65nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;190mW/RDS(on);450mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);550mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;45pF/Output Capacitance(Coss);15pF


P-Channel 20V 550mA 190mW Surface Mount SC-75-3

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);1.65nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;190mW/RDS(on);450mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);550mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);1.65nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;190mW/RDS(on);450mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);550mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;45pF/Output Capacitance(Coss);15pF


    P-Channel 20V 550mA 190mW Surface Mount SC-75-3

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