VBsemi Elec-Single FETs, MOSFETs-NTJD4001NT1G-VB

Description

Drain to Source Voltage;20V/Gate Charge(Qg);5nC@8V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;2.7W/RDS(on);180mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2.6A/Gate Threshold Voltage (Vgs(th));2V


N-Channel Array 20V 2.6A 2.7W Surface Mount SOT-363

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);5nC@8V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;2.7W/RDS(on);180mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2.6A/Gate Threshold Voltage (Vgs(th));2VN-Channel Array 20V 2.6A... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);5nC@8V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;2.7W/RDS(on);180mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2.6A/Gate Threshold Voltage (Vgs(th));2V


    N-Channel Array 20V 2.6A 2.7W Surface Mount SOT-363

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