VBsemi Elec-Single FETs, MOSFETs-NTTFS1D2N02P1E-VB

Description

Drain to Source Voltage;20V/Gate Charge(Qg);123nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;250W/RDS(on);2.5mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);970pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;6.5nF/Output Capacitance(Coss);1.725nF


N-Channel 20V 100A 250W Surface Mount DFN3x3-8

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);123nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;250W/RDS(on);2.5mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);970pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);123nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;250W/RDS(on);2.5mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);970pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;6.5nF/Output Capacitance(Coss);1.725nF


    N-Channel 20V 100A 250W Surface Mount DFN3x3-8

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