VBsemi Elec-Single FETs, MOSFETs-NVBGS4D1N15MC-VB

Description

Drain to Source Voltage;150V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);160A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;6.5nF


N-Channel 150V 160A 300W TO-263-7

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);160A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;6.5nFN-Channel 150V 160A... Read more

$5.73 Excl. VAT

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);160A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;6.5nF


    N-Channel 150V 160A 300W TO-263-7

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