VBsemi Elec-Single FETs, MOSFETs-P1603BV-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);6.8nC@5V/Number;1 N-channel/Pd - Power Dissipation;4.1W/RDS(on);8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);73pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;800pF


N-Channel 13A 4.1W Surface Mount SO-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);6.8nC@5V/Number;1 N-channel/Pd - Power Dissipation;4.1W/RDS(on);8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);73pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

$4.47 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);6.8nC@5V/Number;1 N-channel/Pd - Power Dissipation;4.1W/RDS(on);8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);73pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;800pF


    N-Channel 13A 4.1W Surface Mount SO-8

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