VBsemi Elec-Single FETs, MOSFETs-P2003ND5G-VB

Description

Drain to Source Voltage;40V/Gate Charge(Qg);420nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;108W/RDS(on);14mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);109pF;220pF/Configuration;Common Drain/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.799nF;2nF/Output Capacitance(Coss);282pF;320pF


N-Channel+P-Channel Array 40V 50A Surface Mount TO-252-4L

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);420nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;108W/RDS(on);14mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);109pF;220pF/Configuration;Common Drain/Current... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);420nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;108W/RDS(on);14mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);109pF;220pF/Configuration;Common Drain/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.799nF;2nF/Output Capacitance(Coss);282pF;320pF


    N-Channel+P-Channel Array 40V 50A Surface Mount TO-252-4L

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