VBsemi Elec-Single FETs, MOSFETs-P75N02LDG-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);151nC@10V;71.5nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;235W/RDS(on);2mΩ@10V;3mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);770pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.5V;2.5V/Ciss-Input Capacitance;5.201nF/Output Capacitance(Coss);1.525nF


N-Channel 30V 100A 235W Surface Mount TO-252

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);151nC@10V;71.5nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;235W/RDS(on);2mΩ@10V;3mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);770pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.5V;2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);151nC@10V;71.5nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;235W/RDS(on);2mΩ@10V;3mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);770pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.5V;2.5V/Ciss-Input Capacitance;5.201nF/Output Capacitance(Coss);1.525nF


    N-Channel 30V 100A 235W Surface Mount TO-252

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