VBsemi Elec-Single FETs, MOSFETs-RU2HE5L-VB

Description

Drain to Source Voltage;200V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);850mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;185pF/Output Capacitance(Coss);100pF


N-Channel 200V 5A 42W Surface Mount TO-252

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);850mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);850mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;185pF/Output Capacitance(Coss);100pF


    N-Channel 200V 5A 42W Surface Mount TO-252

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