VBsemi Elec-Single FETs, MOSFETs-Si1016X-T1-GE3-VB

Description

Drain to Source Voltage;20V/Gate Charge(Qg);750pC@4.5V/Number;2 N-Channel/Type;N-Channel/RDS(on);300mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));300mV/Ciss-Input Capacitance;43pF/Output Capacitance(Coss);14pF


N-Channel Array 20V Surface Mount SC75-6

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);750pC@4.5V/Number;2 N-Channel/Type;N-Channel/RDS(on);300mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));300mV/Ciss-Input Capacitance;43pF/Output Capacitance(Coss);14pFN-Channel Array... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);750pC@4.5V/Number;2 N-Channel/Type;N-Channel/RDS(on);300mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));300mV/Ciss-Input Capacitance;43pF/Output Capacitance(Coss);14pF


    N-Channel Array 20V Surface Mount SC75-6

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