VBsemi Elec-Single FETs, MOSFETs-Si1034CX-T1-GE3-VB

Description

Drain to Source Voltage;20V/Gate Charge(Qg);750pC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;220mW/RDS(on);300mΩ@4.5V;350mΩ@2.5V;420mΩ@1.8V;500mΩ@1.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;43pF/Output Capacitance(Coss);14pF


N-Channel 20V 600mA 220mW Surface Mount SC-89-6

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);750pC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;220mW/RDS(on);300mΩ@4.5V;350mΩ@2.5V;420mΩ@1.8V;500mΩ@1.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);750pC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;220mW/RDS(on);300mΩ@4.5V;350mΩ@2.5V;420mΩ@1.8V;500mΩ@1.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;43pF/Output Capacitance(Coss);14pF


    N-Channel 20V 600mA 220mW Surface Mount SC-89-6

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