VBsemi Elec-Single FETs, MOSFETs-SI2333-TP-VB

Description

Drain to Source Voltage;20V/Gate Charge(Qg);16nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;3W/RDS(on);90mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);3.5A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;620pF/Output Capacitance(Coss);95pF


P-Channel 20V 3.5A 3W Surface Mount SOT-23

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);16nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;3W/RDS(on);90mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);3.5A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);16nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;3W/RDS(on);90mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);3.5A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;620pF/Output Capacitance(Coss);95pF


    P-Channel 20V 3.5A 3W Surface Mount SOT-23

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