VBsemi Elec-Single FETs, MOSFETs-SI2337DS-T1-GE3-VB
- VBsemi Elec
Drain to Source Voltage;60V/Gate Charge(Qg);20nC@10V;10.1nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;4.2W/RDS(on);70mΩ@10V;85mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);63pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more
$4.32 Excl. VAT
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