VBsemi Elec-Single FETs, MOSFETs-SI2337DS-T1-GE3-VB

Description

Drain to Source Voltage;60V/Gate Charge(Qg);20nC@10V;10.1nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;4.2W/RDS(on);70mΩ@10V;85mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);63pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;832pF/Output Capacitance(Coss);88pF


P-Channel 60V 4.5A 4.2W Surface Mount SOT-23-3

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);20nC@10V;10.1nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;4.2W/RDS(on);70mΩ@10V;85mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);63pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

$4.32 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);20nC@10V;10.1nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;4.2W/RDS(on);70mΩ@10V;85mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);63pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;832pF/Output Capacitance(Coss);88pF


    P-Channel 60V 4.5A 4.2W Surface Mount SOT-23-3

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