VBsemi Elec-Single FETs, MOSFETs-SI4401DDY-T1-GE3-VB

Description

Drain to Source Voltage;40V/Gate Charge(Qg);33nC@20V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;4W/RDS(on);10mΩ@10V;14mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);291pF/Current - Continuous Drain(Id);10.2A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;3.007nF/Output Capacitance(Coss);335pF


P-Channel 40V 10.2A 4W Surface Mount SO-8

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);33nC@20V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;4W/RDS(on);10mΩ@10V;14mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);291pF/Current - Continuous Drain(Id);10.2A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

$0.87 Excl. VAT

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);33nC@20V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;4W/RDS(on);10mΩ@10V;14mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);291pF/Current - Continuous Drain(Id);10.2A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;3.007nF/Output Capacitance(Coss);335pF


    P-Channel 40V 10.2A 4W Surface Mount SO-8

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