VBsemi Elec-Single FETs, MOSFETs-SI4442DY-T1-E3-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);6.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.5W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);73pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;820pF


30V 1 N-channel 2.5W SOP-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);6.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.5W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);73pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);6.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.5W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);73pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;820pF


    30V 1 N-channel 2.5W SOP-8 Single FETs, MOSFETs RoHS

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